Ballistic/quasi-ballistic transport in nanoscale transistor
نویسندگان
چکیده
منابع مشابه
Ballistic Electron Transport in Nanoscale Three-Branch Junctions
Presented here is an experimental study on a novel electron device utilizing ballistic electron transport. This device is a three-terminal structure comprised of lithographically defined Y-shaped two-dimensional electron gas (2DEG) in a compound semiconductor heterostructure. Ballistic electron transport causes a nonlinear input-output transfer curve, which can be exploited for signal rectifica...
متن کاملSpectral mapping of thermal conductivity through nanoscale ballistic transport.
Controlling thermal properties is central to many applications, such as thermoelectric energy conversion and the thermal management of integrated circuits. Progress has been made over the past decade by structuring materials at different length scales, but a clear relationship between structure size and thermal properties remains to be established. The main challenge comes from the unknown intr...
متن کاملTransport Simulation of a Nanoscale Silicon Rod Field-Effect Transistor
We have simulated the behavior of a rod shaped nanoscale ring-gated field-effect transistor (O-FET) using the PISCES-IIb[1] semiconductor drift-diffusion solver. The results from these simulations are used by a custom SPICE 3f5[2] kernel to simulate several simple logic gates. The usefulness of this kind of transistor is examined within the context of a self-assembling fabrication technique tha...
متن کاملSimulating quantum transport in nanoscale MOSFETs: Ballistic hole transport, subband engineering and boundary conditions
We present a modeling scheme for simulating ballistic hole transport in thin-body fully depleted silicon-on-insulator pMOSFETs. The scheme includes all of the quantum effects associated with hole confinement and also accounts for valence band nonparabolicity approximately. This simulator is used to examine the effects of hole quantization on device performance by simulating a thin (1.5-nm) and ...
متن کاملAn accelerated algorithm for 2D simulations of the quantum ballistic transport in nanoscale MOSFETs
An accelerated algorithm for the resolution of the coupled Schrödinger/Poisson system, with open boundary conditions, is presented. This method improves the subband decomposition method (SDM) introduced in [N. Ben Abdallah, E. Polizzi, Subband decomposition approach for the simulation of quantum electron transport in nanostructures, J. Comp. Phys. 202 (2005), no. 1, 150–180]. The principal feat...
متن کاملذخیره در منابع من
با ذخیره ی این منبع در منابع من، دسترسی به آن را برای استفاده های بعدی آسان تر کنید
ژورنال
عنوان ژورنال: Applied Surface Science
سال: 2008
ISSN: 0169-4332
DOI: 10.1016/j.apsusc.2008.02.150